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The effort to design RF circuits in CMOS is motivated by low cost and significant capacity for on-chip integration. We discuss some of the challenges of implementing RF designs in CMOS focusing on those introduced by the changing properties of FETs as technology nodes scale and devices shrink. We present methods and tools using which designers can ease these challenges and reduce the risk of implementing RF circuits in CMOS.

Electrostatic actuators based on microelectromechanical systems ͑MEMS͒ have many attractive features for use as variable capacitors in high-frequency applications. The devices consist of two electrodes, one fixed and the other movable. In this study, a curved, cantilever beam was used as the movable electrode. A novel process has been developed for fabricating an all-gold, curved beam. The cantilever beams were curved due to an intrinsic stress gradient in the metal. Electroplating and conventional lithography were used to metallize the cantilever beam electrodes. The internal stress gradient in the gold was obtained by changing the electroplating conditions during fabrication. Stiction during release and operation of the variable capacitors was alleviated by treating the gold with an alkane thiol self-assembled monolayer. The intrinsic stress gradient and the stress-induced bending moment were calculated using a generalized model for the stress gradient in the films. Compared to bimetallic, cantilever beams, the curvature of the all-gold beam was found to be independent of temperature. This implies that the operation of the single-metal variable capacitor will be more reproducible and stable with temperature than a comparable bimetallic device.

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