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The results of studying GaAs samples with built-in pi - nu junctions as the base for the construction of radiation-resistant coordinate-sensitive detectors are presented. The GaAs samples have been exposed to the beam of the linear proton accelerator, using an Al target for neutron production. The I-V characteristics of GaAs samples have been analysed to investigate the change in their properties. The study of the radiation resistance of the GaAs samples has shown that their main characteristics (charge collection efficiency, signal-to-noise ratio) are degraded by less than 20% at the integral neutron fluence of 1.2*1015 cm-2.

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