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are developed for distributed systems with constant power loads to guarantee stability during large disturbances. The criteria place design constraints on the Input filter parameters, such as the Q factor, and constraints on the amount of "ideal" constant power load that a system can support. The crlteria are based on Lyapunov stability theory, mixed potential functions, and the existence of equilibrium points. The analytical criteria are validated by means of computer simulations Abstroet-Design oriented criteria

Heavy-ion induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200 V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle LETs greater than 10 MeV-cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic BJT turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.

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