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The impact of a non-magnetic Ta spacer layer on the perpendicular magnetic anisotropy (PMA) of composite magnetic structures constituted by ultra-thin Co/Pd multilayers (MLs) and MgO/CoFeB was studied. Composite structures lacking a Ta layer present in-plane magnetic anisotropy. The strong perpendicular anisotropy observed in sole Co/Pd MLs is not sufficient to pull the magnetic moment out of the film plane, not even after annealing at 300 or 350 °C. PMA with squareness values close to unity and annealing stability up to 350 °C is observed after the insertion of an ultra-thin Ta layer. Our study demonstrates that Ta layer is essential for obtaining perpendicular magnetic axis in MgO/CoFeB/Ta/[Co/Pd]6. The exchange coupling between the MgO/CoFeB bilayer and the Co/Pd MLs is ferromagnetic with sharp switching characteristics. Perpendicular composite structures with sharp magnetization reversal and annealing stability are relevant in perpendicular CoFeB-based magnetic tunnel junctions for the development of gigabit-scale nonvolatile memory.