To prove directly the relation between the emergence of narrow lines in the dislocation photo‐l uminescence spectrum of germanium after the second deformation stage and the splitting value Δ of perfect dislocations a special orientation of crystals at the second deformation stage is used. The samples contain dislocations either with Δ > Δ0 or with Δ < Δ0 (Δ0 is the equilibrium splitting value). The narrow lines are found to arise only on the short‐w ave side of the line corresponding to equilibrium splitting at Δ > Δ0 and on the long‐w ave side at Δ < Δ0. This result and the unique regularity of the narrow line arrangement observed experimentally are considered as a convincing evidence for the effect of the distance between partials on the radiation energy associated with the 90° partials only.

Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn41Sb59 and Ga100-,SbZ with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a-Zn41Sbsg are well described by the conventional Mott-Davis model. Those of both stoichiometric a-GaSb and nonstoichiometric a-Galoo-&ib, appear to be more unusual and require a modification of the model.

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The properties of Nb-doped YBa,Cu,O, ceramics obtained by thermolysis of the oxide or nitrate (Y, Ba, Cu) solution in ammonium nitrate melt were studied. For t h e composition YBa,Cu,~,Nb,,,,O,., , T, = 92 K and the transport critical current J , = 100&4000 A cm? were obtained. The magnetic flux profile was studied by a magneto-optic method at B = 290 G. Domains of size 200400 fin-were found with magnetic critical current J," = 2 x lo4 A cm-2 at 77 K and IO5 A cm-2 at 11 K.

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