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Epitaxial Pb(Zr0.2Ti0.8)O3 layers of good structural quality were grown on single crystal SrTiO3 substrates. The pyroelectric coefficient was estimated from the signal generated by the ferroelectric film working as a pyroelectric detector in the voltage mode, without pre-poling procedure. The obtained value is as high as 1.9 × 10−3 C/m2 K. The large value is attributed to the presence of 90° ferroelectric domains and to the compressive misfit strain, leading to an enhanced ferroelectric polarization.

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Orthorhombic HfO2 exhibits nanoscale ferroelectricity that opens the perspective of ultra-scalable CMOS integration of ferroelectric memories. However, many aspects of the metastable orthorhombic crystallization mechanisms need still to be elucidated...

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