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A new mode of operation of the cubic waffle-iron memory cell in which an anisotropic, rather than isotropic, storage film is used has been investigated. When a conventional1000-A. NiFe film is combined with a high-permeability ferrite baseplate a high-speed, low-current device is obtained. Typical operating parameters using a waffle baseplate containing 0.005-in. slots on O.015-in. centers are:I word =90 rnA, I dioil= 10 rnA, V oionol = 1 m V, and a creep threshold of 5 rnA.A number of woo-A. NiFe films have been evaluated in both a continuous and a discrete shape configuration. It was found that the allowable skew for a particular film may be increased if bipolar rather than unipolar word currents are used.Because of the complex nature of the field patterns in the waffle-iron structure it was necessary to supplement the standard operational pulse tests with direct domain observations using the Kerr magneto-optic effect.The observed domain patterns were completely unexpected. Study of these patterns disclosed large range flux spreading along the easy-direction axis of the film. This spreading of flux, called the "domino effect" has been exploited in a remotely sensed memory cel!. Output signals completely free from the usual digit current couplings have been obtained.

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