A low-noise amplifier (LNA) and mixer circuit in 0.35-m CMOS operates at 2.1 GHz. Merging the LNA and mixer lowers the number of transistors in the signal path and thereby also the nonlinearity and power consumption. The circuit meets the specifications for a direct conversion wide-band code-division multiple access (WCDMA) receiver. Its noise figure is 3.4 dB (5 kHz to 5 MHz), the total conversion gain is 23 dB, the third-order input-referred intercept point is 1.5 dBm, and the local oscillator leakage to the antenna is less than 71 dBm. The fully differential circuit takes 8 mA from a 2.7-V supply.

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A merged L N A a n d mixer with an on-chip V C O is fabricated in 0.35 k m CMOS for a 2.1 G H z W C D M A receiver. T h e front-end consumes 8 m A from 2.7V a n d gives N F of 3.2dB, conversion gain of 24.2 d B , a n d i n p u t I P 3 of-1.SdBm. T h e V C O c o n s u m e s 3 m A while achieving phase noise o f-128.4 and