A. Khoukh scite author profile

003ChemInform Abstract It is shown that the In concentration in alloyed GaAs crystals has a strong influence on polishing and etching in aqueous NaOCl. The polishing rate is found to increase with In concentration and the maximum concentration of NOCl which may be used decreases with increasing In. Etching of GaAs:In with NaOCl reveals the inhomogeneity of In concentration in the crystals, and, thus, etching of GaAs:Inmay be used as a simple test of uniformity of the In distribution.

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New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

Krawczyk

Bejar²,

Blanchet³

et al.

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A. Khoukh

Using the Five-level NPC Inverter to Improve the FOC Control of the Asynchronous Machine

Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence

Chemomechanical Polishing and Etching of GaAs : In and GaAs in Aqueous Solutions of NaOCl

ChemInform Abstract: Chemomechanical Polishing and Etching of GaAs:In and GaAs in Aqueous Solutions of NaOCl.

New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

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