result is a very highly conductive material with an unprecedented level of partial oxidation for a TSeT-based molecular conductor, accompanied by contraction in the interplanar spacing and increased interchain distances (decreased structural two-dimensionality). The use of Fcounterions in modifying the properties of other molecular metals is currently under investigation.Acknowledgment. This research was supported by the NSF through the Northwestern Materials Research Center (DMR 8821571) and by the Office of Naval Research. We thank Mr. J. Schindler for assistance with conductivity and thermoelectric power measurements and Ms. C. L. Stem for her assistance with the X-ray diffraction refinement.Registry No. (TSeTJFo^CIo.so, 136283-11-9. Supplementary Material Available: Tables of atomic coordinates, anisotropic thermal parameters, and bond distances and angles for 1 (6 pages); table of and structure factors for 1 (3 pages). Ordering information is given on any current masthead page.

Synthesis of Stoichiometric Cadmium Selenide Films via SequentialMonolayer Electrodeposition.-CdSe films are prepared by electrodeposition of sequential layers of CdSe by sweeping the potential of Ti or Ni substrates continuously between -0.4 and -0.8 V vs. SCE at a scan rate of 10 V/s in aqueous solutions of CdCl2 (or CdSO4) and SeO2. The resulting CdSe films are found to have 1:1 stoichiometry and to contain both cubic and hexagonal CdSe. SEM results indicate that the films consist of a dense layer of 100 nm grains underneath scattered dendrites. -(KRESSIN, A. M.; DOAN, V. V.; KLEIN, J. D.; SAILOR, M. J.; Chem. Mater. 3 (1991) 6,