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The article analyses about the usage of a modernized experimental setup for studying the interaction of laser radiation with solids at different angles of incidence. To register and investigation the spectrum of the nuclei in the elements under study, a solid-state neodymium laser operating was used in a mono-pulse mode.

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Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.