Experimental data on the electroreflectance spectra of γ irradiated epitaxial GaN films on sap phire are reported. The irradiation doses are 10 5 -2 × 10 6 rad. The theoretical electroreflectance spectra cal culated on the basis of a model of three types of transitions are in agreement with experimental data with rea sonable accuracy. The energies and broadenings of the transitions derived in the context of the model give grounds to infer that, in the GaN films, there are internal stresses dependent on the γ irradiation dose.

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