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A lack of universality with respect to ion species has been recently established in nanostructuring of semiconductor surfaces by low-energy ion-beam bombardment. This variability affects basic properties of the pattern formation process, like the critical incidence angle for pattern formation, and has remained unaccounted for. Here, we show that nonuniform generation of stress across the damaged amorphous layer induced by the irradiation is a key factor behind the range of experimental observations, as the form of the stress field is controlled by the ion/target combination. This effect acts in synergy with the nontrivial evolution of the amorphous-crystalline interface. We reach these conclusions by contrasting a multiscale theoretical approach, which combines molecular dynamics and a continuum viscous flow model, with experiments using Xe + and Ar + ions on a Si(100) target. Our general approach can apply to a variety of semiconductor systems and conditions.

We report on the selective production of self-organized nanohole and nanodot patterns on Si(001) surfaces by ion beam sputtering (IBS) under normal-incidence of 1 keV Ar(+) ions extracted with a cold cathode ion source. For a fixed ion fluence, nanohole patterns are induced for relatively low ion current densities (50-110 µA cm(-2)), evolving towards nanodot patterns for current densities above 190 µA cm(-2). Both patterns display similar characteristics in terms of wavelength, short-range hexagonal order and roughness. Rutherford backscattering spectrometry measurements show that the surface morphology is tuned by the incorporation of metals coming from the ion source and sample surroundings during the IBS process. The metal content measured in nanohole patterns is almost twice that found in nanodot morphologies. Thus, the pattern morphology results from the balance between the dependences of the erosion rate on the ion flux, the local surface topography and composition. These nanostructures have promising applications as growth templates for preferential growth on either hillocks or cavities.

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The effect of the oxidation of gallium nanoparticles (Ga NPs) on their plasmonic properties is investigated. Discrete dipole approximation has been used to study the wavelength of the out-of-plane localized surface plasmon resonance in hemispherical Ga NPs, deposited on silicon substrates, with oxide shell (GaO) of different thickness. Thermal oxidation treatments, varying temperature and time, were carried out in order to increase experimentally the GaO shell thickness in the NPs. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed, barely affecting the intensity of the plasmon resonance. A controllable increase of the GaO thickness as a consequence of the thermal annealing is achieved. In addition, simulations together with ellipsometry results have been used to determine the oxidation rate, whose kinetics is governed by a logarithmic dependence. These results support the tunable properties of the plasmon resonance wavelength in Ga NPs by thermal oxidation at low temperatures without significant reduction of the plasmon resonance intensity.