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Àíîòàö³ÿ.  äàí³é ðîáîò³ áóëî ñôîðìîâàíî ïîâåðõíåâî-áàð'ºðí³ ñòðóêòóðè íà áàç³ êðèñòà-ë³â êðåìí³þ ç ð³çíèìè ïèòîìèìè îïîðàìè (ρ 1 = 24 Îì•ñì, ρ 2 =10 Îì•ñì) òà äîñë³äaeåíî çì³íó ¿õ åëåêòðîô³çè÷íèõ õàðàêòåðèñòèê ï³ä 䳺þ X-ïðîìåí³â. Ïîêàçàíî, ùî â çàëåaeíîñò³ â³ä äå-ôåêòíî¿ ñòðóêòóðè êðåìí³ºâî¿ ï³äêëàäêè, ä³ÿ ðàä³àö³¿ ïðèâîäèòü äî ãåíåðàö³¿ íîâèõ äåôåêò³â àáî çì³íè çàðÿäîâîãî ñòàíó ³ñíóþ÷èõ ³ ÿê íàñë³äîê -çì³íþºòüñÿ ìåõàí³çì ñòðóìîïåðåíå-ñåííÿ â îïðîì³íåíèõ ñòðóêòóðàõ. Abstract. In this work the surface-barrier structures based on p-Si with different resistivity (ρ 1 =24 Ohm•sm, ρ 2 = 10 Ohm•sm) were made and their electrophysical characteristics were investigated under the influence of X-rays. It is shown that depending on the defect structure of silicon substrate, the action of irradiation leads to generation of new defects or changing of charge state of existing defects. Consequently, the mechanism of current transfer in irradiated structures changes.

Abstract. The influence of X-ray and magnetic fields on the formation of radiation defects in silicon temperature sensors is investigated by the method of capacitance spectroscopy. It is shown that the defects which are generated by X-ray radiation are more sensitive to weak magnetic fields in comparison with structural defects. Effects of weak magnetic fields (B=0.17 Tl) on the pattern changes VFC of barrier structures are opposite to the action of X-ray radiation.