No abstract

No abstract

SummaryThe self-organization of monolayer gold nanoparticles (AuNPs) on 3-aminopropyltriethoxysilane (APTES)-functionalized glass substrate is reported. The orientation of APTES molecules on glass substrates plays an important role in the interaction between AuNPs and APTES molecules on the glass substrates. Different orientations of APTES affect the self-organization of AuNps on APTES-functionalized glass substrates. The as grown monolayers and films annealed in ultrahigh vacuum and air (600 °C) were studied by water contact angle measurements, atomic force microscopy, X-ray photoelectron spectroscopy, UV–visible spectroscopy and ultraviolet photoelectron spectroscopy. Results of this study are fundamentally important and also can be applied for designing and modelling of surface plasmon resonance based sensor applications.

Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm −2 K 2 and a factor T o of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.

No abstract