621.315.61 М. S. Skakunov, О. P. Тolbanov, А. V. Тyazhev, and Т. М. YaskevichThe effect of substrate material on the electrical characteristics of Та x О y films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300-400 nm) Та x О y layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric properties.