We applied x-ray absorption spectroscopy and x-ray magnetic circular dichroism ͑XMCD͒ at the Mn 2p-3d resonances to study the Mn 3d electronic configuration and the coupling of Mn 3d magnetic moments in various Ga 1−x Mn x As films. The homogeneity of the Mn depth profile throughout the Ga 1−x Mn x As film was tested by additional structure-sensitive x-ray resonant reflectivity measurements. In all investigated Ga 1−x Mn x As films the electronic and magnetic configuration of the Mn impurities varies throughout the Mn-doped layer. This inhomogeneity is caused by the surface segregation of nonferromagnetic Mn in a d 5 configuration. X-ray resonant reflectivity data show that the accumulation of nonferromagnetic Mn near the surface is strongly enhanced by low-temperature annealing. By XMCD we identified the Mn species responsible for the long-range ferromagnetic coupling. It is characterized by an Mn 3d 5 -3d 6 mixed-valence acceptor state that is unchanged at all investigated Mn concentrations, ranging from 1% to 6%. Additional nonferromagnetic Mn occurs in the bulk of high-concentration samples. We discuss a model in which the latter is due to antiferromagnetic Mn-Mn nearest-neighbor pairs.