No abstract

Investigated are the mechanism and etch rate of Mo films in the H202-NH3-H20 system. Using infrared spectroscopy, Auger electron spectroscopy, and a number of qualitative chemical reactions, it is found out that the process of etching is described by the general equation Mo + 3H202 + 2NH3 ~ (NH4)2MoO4 + 2H20 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 142.58.129.109 Downloaded on 2015-06-15 to IP