Abstract:The multi-gate transistors such as Fin-FETs, Tri-gate FETs, and Gate-all-around (GAA) FETs are remarkable breakthrough in the electronic industry. 3D Transistor is taking the place of the conventional 2D planar transistor for many reasons. 3D transistors afford more scalability, energy efficient performance than planar transistors and increase the control on the channel region to reduce the short channel effect, which enables us to extend Moore's law to further extent. In this paper, we will present a review about their structure, operation, types and fabrication.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.