Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling, are some of the most important functional materials with applications ranging from ultrasound imaging to actuators. Since their discovery, their complexity of nanoscale chemical and structural heterogeneity has made understanding the origins of their electromechanical properties a seemingly intractable problem. Here, we employ aberration-corrected scanning transmission electron microscopy (STEM) to quantify various types of nanoscale heterogeneities and their connection to local polarization in the prototypical relaxor ferroelectric system Pb(Mg 1/3 Nb 2/3)O 3-PbTiO 3 (PMN-PT). We identify three main contributions that each depend on Ti content: chemical order, oxygen octahedral tilt, and oxygen octahedral distortion. These heterogeneities are found to be spatially correlated with low angle polar domain walls, indicating their role in disrupting long-range polarization and leading to nanoscale domain formation and the relaxor response. We further locate nanoscale regions of monoclinic-like distortion that correlate directly with Ti content and electromechanical performance. Through this approach, the connection between chemical heterogeneity, structural heterogeneity and local polariza
Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of YFe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.
The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 Å moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques.
Exsolution synthesizes self-assembled metal nanoparticle catalysts via phase precipitation. An overlooked aspect in this method thus far is how exsolution affects the host oxide surface chemistry and structure. Such information is critical as the oxide itself can also contribute to the overall catalytic activity. Combining X-ray and electron probes, we investigated the surface transformation of thin-film SrTi0.65Fe0.35O3 during Fe0 exsolution. We found that exsolution generates a highly Fe-deficient near-surface layer of about 2 nm thick. Moreover, the originally single-crystalline oxide near-surface region became partially polycrystalline after exsolution. Such drastic transformations at the surface of the oxide are important because the exsolution-induced nonstoichiometry and grain boundaries can alter the oxide ion transport and oxygen exchange kinetics and, hence, the catalytic activity toward water splitting or hydrogen oxidation reactions. These findings highlight the need to consider the exsolved oxide surface, in addition to the metal nanoparticles, in designing the exsolved nanocatalysts.
Photon upconversion is a photophysical process in which two lowenergy photons are converted into one high-energy photon. Photon upconversion has broad appeal for a range of applications from biomedical imaging and targeted drug release to solar energy harvesting. Current upconversion nanosystems, including lanthanide-doped nanocrystals and triplet−triplet annihilation molecules, have achieved upconversion quantum yields on the order of 10−30%. However, the performance of these materials is hampered by inherently narrow absorption cross sections and fixed energy levels originating in atomic, ionic, or molecular states. Semiconductors, on the other hand, have inherently wide absorption cross sections. Moreover, recent advances enable the synthesis of colloidal semiconductor nanoparticles with complex heterostructures that can control band alignments and tune optical properties. We synthesize and characterize a three-component heterostructure that successfully upconverts photons under continuous-wave illumination and solarrelevant photon fluxes. The heterostructure is composed of two cadmium selenide quantum dots (QDs), an absorber and emitter, spatially separated by a cadmium sulfide nanorod (NR). We demonstrate that the principles of semiconductor heterostructure engineering can be applied to engineer improved upconversion efficiency. We first eliminate electron trap states near the surface of the absorbing QD and then tailor the band gap of the NR such that charge carriers are funneled to the emitting QD. When combined, these two changes result in a 100-fold improvement in photon upconversion performance.
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