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We theoretically show that conditions for THz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without formation of electric domains and corruption from pump harmonics.

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We theoretically consider the amplification of THz radiation in a superlattice Bloch oscillator. The main dilemma in the realization of THz Bloch oscillator is finding operational conditions which allow simultaneously to achieve gain at THz frequencies and to avoid destructive space-charge instabilities. A possible solution to this dilemma is the extended Limited Space-Charge Accumulation scheme of Kroemer (H. Kroemer, cond-mat/0009311). Within the semiclassical miniband transport approach we extend its range of applicability by considering a difference in the relaxation times for electron velocity and electron energy. The kinetics of electrons and fields establishing a stationary signal in the oscillator is also discussed.