Magnetic Weyl semimetals with broken time-reversal symmetry are expected to generate strong intrinsic anomalous Hall effects, due to their large Berry curvature. Here, we report a magnetic Weyl semimetal candidate, Co3Sn2S2, with a quasi-two-dimensional crystal structure consisting of stacked Kagomé lattices. This lattice provides an excellent platform for hosting exotic topological quantum states. We observe a negative magnetoresistance that is consistent with the chiral anomaly expected from the presence of Weyl nodes close to the Fermi level. The anomalous Hall conductivity is robust against both increased temperature and charge conductivity, which corroborates the intrinsic Berry-curvature mechanism in momentum space. Owing to the low carrier density in this material and the significantly enhanced Berry curvature from its band structure, the anomalous Hall conductivity and the anomalous Hall angle simultaneously reach 1130 Ω−1 cm−1 and 20%, respectively, an order of magnitude larger than typical magnetic systems. Combining the Kagomé-lattice structure and the out-of-plane ferromagnetic order of Co3Sn2S2, we expect that this material is an excellent candidate for observation of the quantum anomalous Hall state in the two-dimensional limit.

Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co3Sn2S2 and discovered its characteristic surface Fermi-arcs and linear bulk band dispersions across the Weyl points. These results establish Co3Sn2S2 as a magnetic Weyl semimetal that may serve as a platform for realizing phenomena such as chiral magnetic effects, unusually large anomalous Hall effect and quantum anomalous Hall effect.

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.