CID imaging arrays were fabricated on Hg0.7 Cd0.3Te produced by the solid state recrystallization technique. It was found that the most serious source of dark current was sub-grain boundaries. SEM studies of the microstructure revealed by etching showed that boundaries with a high denisty of dislocations were detectable sources of dark current, while those boundaries with a low density of dislocations, as well as individual dislocations were not. TEM showed that all dislocations were free of precipitates, and most were not dissociated. The sub-grain boundaries were found to arise from misorientation between dendrites which form during the solidification from the melt.

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