A 15-inch diagonal Super-TFT-LCD (in-plane switching mode), with a brightness of 400 cd/m 2 , has been developed. The moving picture image quality is improved by alternating the light on and off periods, and synchronizing those periods with a gate selection. The brightness is realized without increasing power consumption by increasing the lamp current in the on period, while the off period contributes to lamp cooing.

Abstract— An innovative pixel‐driving technology for high‐performance active‐matrix OLED flat‐panel displays is described. Called “clamped‐inverter circuit architecture,” it uses luminescent‐period‐control driving to reduce the inter‐pixel non‐uniformity caused by the device‐to‐device variability of low‐temperature poly‐Si TFTs. A prototype full‐color display shows a luminous deviation of less than 1.6%, which corresponds to only the LSB‐error in 6‐bit gray‐scale.

A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si 1−x Ge x layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si 1−x Ge x layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 µm has been obtained, which shows the great potential of this structure in Si-based device applications.