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We report the masidess holographic fabrication of submicron relief diffraction gratings with periods 230-500 nm and depth-to-spacing ratio as high as 0.5 on the surface ofp-GaAs under visible laser light. The gratings were fabricated in the process of photochemical wet etching by laser-induced etch rate reduction method. The physical mechanism of laserinduced grating formation in p-type semiconductors is considered.

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