-Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology. Index Terms-65 nm, 90 nm, COTS, dynamic test, heavy ions, multiple cell upset (MCU), neutrons, single event upset (SEU), SRAMs.

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Today, the near‐Earth space is facing a paradigm change as the number of new spacecraft is literally skyrocketing. Increasing numbers of small satellites threaten the sustainable use of space, as without removal, space debris will eventually make certain critical orbits unusable. A central factor affecting small spacecraft health and leading to debris is the radiation environment, which is unpredictable due to an incomplete understanding of the near‐Earth radiation environment itself and its variability driven by the solar wind and outer magnetosphere. This paper presents the FORESAIL‐1 nanosatellite mission, having two scientific and one technological objectives. The first scientific objective is to measure the energy and flux of energetic particle loss to the atmosphere with a representative energy and pitch angle resolution over a wide range of magnetic local times. To pave the way to novel model‐in situ data comparisons, we also show preliminary results on precipitating electron fluxes obtained with the new global hybrid‐Vlasov simulation Vlasiator. The second scientific objective of the FORESAIL‐1 mission is to measure energetic neutral atoms of solar origin. The solar energetic neutral atom flux has the potential to contribute importantly to the knowledge of solar eruption energy budget estimations. The technological objective is to demonstrate a satellite deorbiting technology, and for the first time, make an orbit maneuver with a propellantless nanosatellite. FORESAIL‐1 will demonstrate the potential for nanosatellites to make important scientific contributions as well as promote the sustainable utilization of space by using a cost‐efficient deorbiting technology.

-Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. Additionally, TCAD simulations are used to give insight on the physical mechanisms involved.