Articles you may be interested inHigh performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm Response to "Comment on 'Depletion width measurement in an organic Schottky contact using a metalsemiconductor field-effect transistor' " [Appl. Phys. Lett.97, 096101 (2010)] Appl. Phys. Lett. 97, 096102 (2010); 10.1063/1.3475396 Comment on "Depletion width measurement in an organic Schottky contact using a metal-semiconductor fieldeffect transistor" [Appl. Phys. Lett.91, 083513 (2007)] Appl. Phys. Lett. 97, 096101 (2010);

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