The paper describes the design principles of multi-element broadband microwave attenuators of a high power level on film resistors. The proposed approaches make it possible to increase the input power level by several times or, at a constant input power, to significantly expand the ope¬rating frequency band. The studied attenuators with an insertion loss of 1-10 dB provide high-quality matching in the 0-2 GHz frequency band at an input power level of up to 500 W. These parameters are obtained by introducing quarter-wave sections of transmission lines with a certain wave imped-ance into the longitudinal and transverse branches of matched U-shaped and T-shaped dissipative structures.