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This paper reported the synthesis of Ho-doped SBN (SrBi2−xHoxNb2O9: x = 0 and 0.4) by a co-precipitation method and investigated the synthesized material with X-ray diffraction analyses, infrared spectroscopy, and electrical measurements. The results show that the Ho-doped SBN has low loss values at higher frequencies and the flattening of dielectric constant which are very desirable in nonvolatile ferroelectric random access memory applications.

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