We report the demonstration of plasmonic titanium nitride (TiN) for fabrication of an efficient hybrid photodetector. A novel synthesis method based on plasma nanotechnology is utilized for producing air stable plasma polymerized aniline-TiN (PPA-TiN) nanocomposite and its integration in photodetector geometry. The device performs as a self-powered detector that responds to ultraviolet and visible light at zero bias. The photodetector has the advantage of broadband absorption and outcomes an enhanced photoresponse including high responsivity and detectivity under low light conditions. This work opens up a new direction for plasmonic TiN-based hybrid nanocomposite and its exploitation in optoelectronic applications including imaging, light-wave communication and wire-free route for artificial vision.
Studies on hot carrier science and technology associated with various types of nanostructures are dominating today’s nanotechnology research. Here we report a novel synthesis of polyaniline-gold (PAni-Au) nanocomposite thin films with gold nanostructures (AuNs) of desired shape and size uniformly incorporated in the polymer matrix. According to shape as well as size variation of AuNs, two tunable plasmonic UV-Visible absorption bands are observed in each of the nanocomposites. Plasmonic devices are fabricated using PAni-Au nanocomposite having different UV-Visible plasmon absorption bands. However, all the devices show strong photoelectrical responses in the blue region (400–500 nm) of the visible spectrum. The d-band to sp-band (d-sp) transition of electrons in AuNs produces hot holes that are the only carriers in the material responsible for photocurrent generation in the device. This work provides an experimental evidence of novel plasmonic hot hole generation process that was still a prediction.
We report high performance flexible hybrid ultraviolet photodetector with solar-blind sensitivity using nanocomposite film of plasma polymerized aniline-titanium dioxide. A facile solvent-free plasma technique is used to synthesize superior quality hybrid material with high yield. The hybrid photodetector exhibited high photoconductive gain of the order of ∼105 and fast speed with response and recovery time of 22.87 ms and 34.23 ms. This is an excellent result towards getting a balance in the response speed and photoconductive gain trade-off of the photodetectors reported so far. In addition, the device has the advantages of enhanced photosensitivity ((Ilight − Idark)/Idark) of the order of ∼102 and high responsivity of ∼104 AW−1. All the merits substantiates that, to prepare hybrid material, plasma based method holds potential to be an easy way for realizing large scale nanostructured photodetectors for practical applications.
Since the discovery of the state-of-the-art hybrid halide perovskites, their application in optoelectronic systems has drawn considerable attention. However, the toxicity from lead (Pb) and the volatility induced by organic constituents hinder their future large-scale market development. Herein, a fully inorganic Pb-free halide perovskite based on robust Cs 3 Bi 2 I 9 is synthesized and realized its potential in photodetector application. The material property investigation suggests the good crystalline quality with strong absorption coefficient suitable for photodetection. An interesting feature based on the extended absorption is obtained, which is the characteristic of a weak phonon-assisted transition. Additionally, the morphological features display the beautifully grown micrometer-sized crystals of Cs 3 Bi 2 I 9 . The fabricated photodetector demonstrated the self-powered operation (zero-bias state) with a very low dark current of 0.46 pA. Profiting from this, an improved photosensitivity of 1.4 × 10 4 is achieved. Moreover, along with self-powered photodetection, the photodetector exhibits a broad spectral response (450−950 nm), high detectivity (1.2 × 10 10 /1.6 × 10 12 Jones), high responsivity (0.59 μA W −1 /3.8 mA W −1 ), and fast response speed (ms) under a weak optical signal of 0.1 mW cm −2 with a larger active area of 0.25 cm 2 . The photodetector shows high photostability which was well retained for almost 2000 repetitive cycles without degradation. More strikingly, based on the core stability of the perovskite film, an excellent long-term stability of 3 months (90 days) is achieved for the photodetector even after exposure to moist air (75% relative humidity). This study thus highlights one of the few Pb-free all-inorganic perovskite photodetectors employing a simple device architecture with a larger active area that outshines by showing efficient and comparable performance under the self-powered mode under low light conditions. KEYWORDS: perovskite, lead-free, Cs 3 Bi 2 I 9 , broadband, self-powered, photodetector
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