RF magnetron sputtering technique was employed to fabricate gallium zinc oxide ((Ga)ZnO) semiconductor thin film transistor (TFT) at 100°C. X-ray diffraction and Scanning electron microscopy were used to identify the structure and morphology of (Ga)ZnO layer. Selfheating effect was very much reduced when compared with output characteristics of a TFT fabricated using undoped zinc oxide. The low deposition and processing temperatures make (Ga)ZnO-TFTs very promising for the flexible electronics.

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