The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 10 4 at λ ex = 638 nm and P inc = 512 mW cm 2− ; R = 120 A W 1− at P inc = 2 mW cm 2− for the same λ ex ). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.

MoS2‐based transparent electronics can revolutionize the state‐of‐the‐art display technology. The low‐temperature synthesis of MoS2 below the softening temperature of inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma‐enhanced chemical vapor deposition is utilized to grow large‐area MoS2 on a regular microscopic glass (area ≈27 cm2). To benefit from uniform MoS2, 7 × 7 arrays of top‐gated transparent (≈93% transparent at 550 nm) thin film transistors (TFTs) with Al2O3 dielectric that can operate between −15 and 15 V are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated static performance parameters, such as photoresponsivity is found to be 27 A W−1 (at λ = 405 nm and an incident power density of 0.42 mW cm−2). The stable and uniform photoresponse of transparent MoS2 TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics.

2D transition‐metal dichalcogenides (TMDs) have been successfully developed as novel ubiquitous optoelectronics owing to their excellent electrical and optical characteristics. However, active‐matrix image sensors based on TMDs have limitations owing to the difficulty of fabricating large‐area integrated circuitry and achieving high optical sensitivity. Herein, a large‐area uniform, highly sensitive, and robust image sensor matrix with active pixels consisting of nanoporous molybdenum disulfide (MoS2) phototransistors and indium–gallium–zinc oxide (IGZO) switching transistors is reported. Large‐area uniform 4‐inch wafer‐scale bilayer MoS2 films are synthesized by radio‐frequency (RF) magnetron sputtering and sulfurization processes and patterned to be a nanoporous structure consisting of an array of periodic nanopores on the MoS2 surface via block copolymer lithography. Edge exposure on the nanoporous bilayer MoS2 induces the formation of subgap states, which promotes a photogating effect to obtain an exceptionally high photoresponsivity of 5.2 × 104 A W−1. A 4‐inch‐wafer‐scale image mapping is successively achieved using this active‐matrix image sensor by controlling the device sensing and switching states. The high‐performance active‐matrix image sensor is state‐of‐the‐art in 2D material‐based integrated circuitry and pixel image sensor applications.

The ubiquitous field-effect transistor (FET) is widely used in modern digital integrated circuits, computers, communications, sensors, and other applications. However, reliable biological FET (bio-FET) is not available in real life due to the rigorous requirement for highly sensitive and selective bio-FET fabrication, which remains a challenging task. Here, we report an ultrasensitive and selective bio-FET created by the nanorings of molybdenum disulfide (MoS 2 ) nanopores inspired by nuclear pore complexes. We characterize the nanoring of MoS 2 nanopores by scanning transmission electron microscopy, Raman, and X-ray photoelectron spectroscopy spectra. After fabricating MoS 2 nanopore rings-based bio-FET, we confirm edge-selective functionalization by the gold nanoparticle tethering test and the change of electrical signal of the bio-FET. Ultrahigh sensitivity of the MoS 2 nanopore edge rings-based bio-FET (limit of detection of 1 ag/mL) and high selectivity are accomplished by effective coupling of the aptamers on the nanorings of the MoS 2 nanopore edge for cortisol detection. We believe that MoS 2 nanopore edge rings-based bio-FET would provide platforms for everyday biosensors with ultrahigh sensitivity and selectivity.

Molybdenum disulfide (MoS2), a transition metal dichalcogenide, has been demonstrated as a promising substitute for noble metal catalysts in the hydrogen evolution reaction (HER). However, its practical application is limited by the inert nature of the basal planes. In this study, we developed a highly active and robust MoS2 catalyst with uniform triangular nanoholes on its basal plane via nanoscale patterning. The process successfully created edge defects with a Mo-terminated zigzag configuration. Notably, owing to the exposure of Mo-terminated zigzag edges at numerous nanopores, the overpotential of the nanoporous MoS2–x was significantly lower than that of the pristine MoS2. In addition, the stable catalytic performance of the nanoporous MoS2–x was verified under continuous measurement for 16 h. This study provides new insights into the nanoscale patterning and edge engineering of two-dimensional MoS2 to design highly efficient and low-cost HER electrocatalysts.