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International audiencePolarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors

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Femtosecond laser sources and optical frequency combs in the molecular fingerprint region of the electromagnetic spectrum are crucial for a plethora of applications in natural and life sciences. Here we introduce Cr 2-based lasers as a convenient means for producing super-octave mid-IR electromagnetic transients via optical rectification (or intra-pulse difference frequency generation, IDFG). We demonstrate that a relatively long, 2.5 μm, central wavelength of a few-cycle Cr 2 :ZnS driving source (20 fs pulse duration, 6 W average power, 78 MHz repetition rate) enabled the use of highly nonlinear ZnGeP 2 crystal for IDFG with exceptionally high conversion efficiency (>3%) and output power of 0.15 W, with the spectral span of 5.8-12.5 μm. Even broader spectrum was achieved in GaSe crystal: 4.3-16.6 μm for type I and 5.8-17.6 μm for type II phase matching. The results highlight the potential of this architecture for ultrafast spectroscopy and generation of broadband frequency combs in the longwave infrared.

Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 μm InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design.