Operation of solid-state electronics products in the field of ionizing radiation can significantly change their properties, contributing to their premature destruction or loss of technical characteristics necessary for normal operation of the equipment. The changes observed in this case are caused by a number of specific processes discussed above. Distinguish between reversible and irreversible changes. Irreversible (residual) include radiation changes that remain partially or completely after the termination of exposure. The magnitude of radiation changes is determined by the amount of energy absorbed by materials when interacting with radiation, as well as the rate at which this energy is transferred to them. It depends on the type of radiation and its parameters (energy spectrum, flux density, intensity, etc.), as well as on the nuclear-physical characteristics of materials. Criteria for the radiation resistance of photodetectors. The criterion for the parametric reliability of photodetectors is formulated on the basis that the object under consideration degrades its parameters gradually, both with an increase in the duration of exposure and the dose of radiation. The purpose of the photodetectors, the imposed restrictions on the criterion of their performance, as well as the physics of the effect of radiation, allow us to consider photodetectors as an object functioning under noise conditions. This allows statistical analysis methods to be applied. With this approach, we can use a well-studied mathematical apparatus for testing statistical hypotheses. Three criteria of radiation resistance of photodetectors are proposed. The first is the signal-to-noise ratio in the interpretation of sufficient statistics, the second is the criterion for the average detection error (Kotelnikov's criterion), and the third is the Bayesian risk criterion. This article examines the physical processes and the development of methods for radiation modification of the parameters of semiconductor optoelectronic devices.

The article created a model of the primary converter - a gamma radiation sensor. It is based on the following properties of a semiconductor crystal: maximum quantum efficiency; maximum mobility of charge carriers; minimum density of structural defects; maximum values of resistivity and density. The combination of these properties provides a significant sensitivity of sensor with the minimum size of crystal. The inconsistency of such a combination must be eliminated both in the process of manufacturing a crystal (for example, a high-resistance crystal can be obtained by the simultaneous use of cleaning, components, and compensating doping) and subsequent processing by the methods proposed in this work (thermal field method, ionization annealing). Among the known materials for gamma radiation sensors, single crystals of Cdx-Zn1-xTe solid solutions have the optimal combination of the above properties and possibilities of their preparation. The advent of modern semiconductor sensors for the first time linked nuclear instrumentation and electronics into a single complex - a semiconductor detector. It combines a semiconductor primary converter of ionizing radiation (sensor), a secondary converter of information from the sensor (electronics) and software for processing this information, interconnected in terms of problem being solved and parameters. However, the development of nuclear energy and the spread of nuclear technologies have put forward new requirements for the control and metrology of ionizing radiation. The current level of nuclear instrumentation cannot fully satisfy them. The solution to this problem can be provided by the development of: methods for choosing the optimal type of semiconductor materials and controlling their properties to create uncooled detectors; sensors with higher resolution; electronics with lower noise level; computer methods and information processing programs with lower estimated costs; control systems for nuclear materials and the state of AES protective barriers that meet the requirements of the existing automatic control of radiation safety (ARS). This article is devoted to the solution of such problems, which ensures the relevance of its topic. The main principle of solving the named scientific problem was results of nuclear-physical studies of the interaction of ionizing radiation with semiconductors, the development and experimental verification of physical-mathematical models of technological processes dosimetry and control of nuclear materials.