A 2 p.m BiCMOS process module has been developed for incorporation into existing high performance 2-phase CCD processes, to enable integration of digital and analog circuits on-chip with the CCD image sensor. The modular process architecture allows the integration of CMOS. NPN bipolar or BiCMOS circuits without affecting the baseline CCD characteristics. A design of experiments approach was employed using process and device simulation tools and selected physical experiments. to optimize CMOS and NPN device performance and process latitude. Both enhancement and depletion mode Poly-1 and Poly-2 CMOS devices were realized and demonstrated good long channel behavior down to 1.6 .trn drawn. A 12 V, 2.5 GHz, low collector resistance NPN was also produced. Experimental process splits were used to demonstrate and verify that the CMOS and NPN process module incorporation did not affect the CCD device characteristics or yield. CMOS circuit performance was found to be comparable to that of a standard 2 im CMOS process. Finally, a trilinear sensor with on-chip timing generation and Correlated Double Sample was designed and fabricated. To our knowledge this is the first demonstration of high performance CCD, 2 pm CMOS. and an isolated vertical NPN, integrated on the same chip.
Ahstract -A 2 pm BiCMOS process module has been developed for incorporation into existing charge-coupled device (CCD) image sensor processes. The modular process architecture allows integration of CMOS, NPN bipolar or BiCMOS circuits without affecting the baseline CCD characteristics, and enables on-chip integration of desired analog and digital circuit functions with the image sensor. To our knowledge this is the first demonstration of high performance CCD, 2 pm CMOS, and an isolated vertical NPN integrated on the same chip.
An ultra-high resolution 14,400 pixel trilinear image sensor is under development to meet customer requirements as they progress into next generation, high-end color scanning systems. High-performance features being incorporated into this device include an enhanced color filter scheme providing improved blue and green responsivity, electronic exposure control, and antiblooming protection. To our knowledge, this will be the highest resolution trilmear sensor to date and is being designed to provide common optical length to Kodak's current line oflong trilinear imagers.
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