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Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors J. Appl. Phys. 109, 024509 (2011); 10.1063/1.3533941 Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al 0.2 Ga 0.8 N / GaN interface and the rapid thermal annealing effect

In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al2O3) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10−3(1 × 10−3), and −1.7 × 10−3(2 × 10−3) in GaN layer and 5.1 × 10−3 (−3.3 × 10−3), and 8.8 × 10−3(−1.3 × 10−3) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.