We demonstrated tuning of the emission energy of semiconductor quantum dots (QDs) in order to control the resonant interaction between the QDs. In this approach, a thin layer of phase-change material in a crystalline phase is deposited on QDs and a local strain is applied through amorphization, resulting in a volume expansion, forming an indenter, which induces an energy shift of the QDs. We successfully tuned the emission energies of two closely located QDs to the same energy by controlling the direction and magnitude of the peak shift through the precise adjustment of the position and size of an indenter.

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