The possibility of tuning the resonance frequency and photon lifetime corresponding to Anderson localized resonant modes is investigated using the finite-difference time-domain technique. Experimentally obtained dimensions of molecular beam epitaxy grown self-organized nanowires on silicon have been employed to systematically generate disordered patterns, where multiple-scattering mediated light trapping has been analyzed. The results of our analysis indicate that in spite of the inherent randomness of the scattering medium, it is possible to control the wavelength and strength of the localized modes by varying dimensional features of the nanowires. The localization wavelength in the medium can be tuned toward a higher wavelength by increasing the average diameter of nanowires, whereas cavity quality factors in the order of 105 can be attained by increasing the fill factor of the array. The observed behavior is explained and empirically modeled, and the relation is found to be in good agreement with the predicted localization characteristics for experimentally grown self-assembled nanowires. The results of the analysis indicate that in spite of the absence of periodicity, localization in this medium is related to interference effects resulting from Bragg-like diffractions, which in effect results in the observed systematic variation of localization characteristics as nanowire dimensions are varied.