A technology of manufacturing of carbon nano-wall films (CNWs) as well as a methodology for control of their properties are briefly described. Short channel effects (SCEs) are discussed. Single carbon nano-wall field effect transistor (SCNWFET) is proposed and modeling considerations using technology computer aided design (TCAD) software are explained. Device performance estimation and immunity to SCEs are given. Basic electrical characteristics and parameters important for application in integrated circuits are discussed.
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