Dirac point of non-covalently functionalized graphene field effect transistors has been demonstrated as a reliable parameter for rapid (∼40 s), reliable and ultra-sensitive (ppm-level) detection of 2,4,6-trinitrotoluene under ambient conditions.

In this communication we have unveiled the importance of lanthanide dopant, to realize n-doping of GFETs with an exceptional ambient stability and enhanced mobility. An unconventional mechanism proposed for such phenomenon is well supported by various analytical methods and rationalized by computational calculations.

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