Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diodes, designed so that the energy difference between the barrier height of the collector side and the coresonance tunneling energy at the coresonance voltage became larger on the basis of the simulation results of voltage-dependent quantized-level shifts and fabricated with the growth of highly B-doped emitter and collector layers without post-annealing, exhibited a flatter surface and a higher performance with a peak current density of 73 kA cm−2 and suppressed thermionic emission with a peak-to-valley current ratio of 14.

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