Amorphous Si 0.60 Ge 0.40 :H x films containing 1.7, 3.9, 7.1, 12.1, and 17.3 at % H are prepared by magnetron sputtering at different hydrogen partial pressures, and their electrical conductivity is measured from 80 to 350 K. The conductivity of the films exhibits Arrhenius behavior in the range 250-350 K and satisfies the
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