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n‐Type SnS2 with a layered structure has been grown by chemical vapor transport using phosphorus as doping agent. It has a resistivity of 1 Ω cm and an energy gap of 2.2 eV. It is characterized by very low dark current under anodic polarization. The material is not stable under prolonged illumination in aqueous acidic and basic solutions. However, the stability can be improved considerably in acidic solutions containing potassium iodide. The voltammograms under illumination indicate that the photocurrent onset potential, particularly in alkaline solutions, depends on redox reagents used. Photopotentials do not vary as expected with different redox couples.

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