The density of localized states at the semiinsulating polycrystalline and singlecrystal silicon interface J. Appl. Phys. 60, 3599 (1986); 10.1063/1.337565High resolution electron microscopic and spectroscopic characterization of semiinsulating polycrystalline silicon and its interface with singlecrystal silicon Appl. Phys. Lett. 48, 65 (1986); 10.1063/1.96763Density of states at the interface between semiinsulating polycrystalline and single crystal silicon

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We simulate the charge carrier traffic between the energy bands and the interface states in structures like Al/SiO2/6H-SiC, Al/diamond/Si and Al/SIPOS/Si to explain their high frequency capacitance-voltage behavior. The structures have in common that traditional electrical measurement techniques performed at room temperature are strongly influenced by non-equilibrium carrier conditions at the insulator-semiconductor interface. This can result in large errors in the interface data extracted from such studies when thermal equilibrium conditions are assumed. In this work, high frequency capacitance-voltage data are compared to numerical simulations which include such thermal non-equilibrium conditions to enable more accurate estimates of interface state parameters in such structures.

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