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Thesi1icon-based alloys have been fabricated bymeansofanexcimer laser(XeC1; 308 nm) ablation in a pure hydrogen atmosphere for the first time, and their crystallographic structure has been investigated by anx-ray diffraction method,asa function ofhydrogen gas pressure PH2 (0.1-3.0Torr) during the deposition. As a result, it is found that the alloys prepared at both about 100 and 300 K contain silicon microcrystals, and their size becomes a minimum at P,: =0.5 Torr. On the other hand, the lattice constant increases monotonically with increasing hydrogen gas pressure in the range of 0.1 Torr s P,, s 3.0Torr.The resuls are discussed in relation to the growth mechanism.