The worldwide first all-fiber THz time-domain spectrometer for operation at 1.5 microm is presented. Applications up to 3 THz are demonstrated. Key devices are photoconductive antennas based on novel LT InGaAs/InAlAs multi-layer structures.

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Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.

We present a detailed description and a first theoretical study of an improved concept for high-frequency self-pulsations (SPs) in multisection (MS)-DFB lasers with an integrated phase tuning section. The DFB wavelengths of the two DFB sections are spectrally detuned by nearly the stopband width using two gratings with different grating periods. If both DFB sections are operated at lasing conditions and an appropriate phase is chosen, we obtain beating-type SP with a frequency given by the spectral distance of two lasing modes. Good agreement between theory and experiment is obtained with respect to the role of the detuning, the role of the phase section, as well as the synchronization to external injected signals. The modeling shows a strong nonlinear coupling of the two involved modes via the carrier densities. This effect is important for the mutual coherence and for the observed locking of the beating oscillations to external signals. From the results of the calculations, we draw the conclusion that even higher SP frequencies can be obtained based on the new concept

A compact and low-cost continuous wave terahertz spectrometer operating at an optical wavelength of 1.5 μm is presented. The spectrometer employs high power distributed feedback (DFB) laser diodes in integrated "butterfly" packages. No further optical amplification of the beating signal is required. An integrated photodiode antenna with an output power of 5 μW at 500 GHz is used as efficient terahertz emitter. Employing low-temperature grown (LT-) InGaAs/InAlAs photoconductive receivers as coherent detectors, SNR values of the terahertz power up to 75 dB are attained at an integration time of 300 ms. Accurate characterization of the thermal tuning behavior of the DFBs and precise thermal control yield an absolute accuracy of 1 GHz and a resolution of better than 5 MHz, without any on-line monitoring of the optical frequency. Due to the high frequency resolution no delay line is needed to vary the terahertz phase.