This article provides information about the process of obtaining a Mn4Si7 film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn4Si7 film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn4Si7/SiO2 film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn4Si7 film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn4Si7 on SiO2/Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges.
The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.
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