Bacillus velezensis CC09, which was isolated from healthy leaves of Cinnamomum camphora and previously identified as Bacillus amyloliquefaciens CC09, shows great potential as a new biocontrol agent, in control of many phytopathogenic diseases. To extend our understanding of the potential antifungal capacities, we did a whole genome analysis of strain CC09. Result shows that strain CC09 has a relatively large genome size (4.17Mb) with an average GC content of 46.1%, and 4021 predicted genes. Thirteen secondary metabolites encoding clusters have been identified within the genome of B. velezensis CC09 using genome mining technique. Data of comparative genomic analysis indicated that 3 of the clusters are conserved by all strains of B. velezensis, B. amyloliquefaciens and B. subtilis 168, 9 by B. velezensis and B. amyloliquefaciens, and 2 by all strains of B. velezensis. Another 2 clusters encoding NRPS (Non-Ribosomal Peptide Synthetases) and NRPS-TransATPKS (NRPS and trans-Acyl Transferase Polyketide Synthetases) respectively are observed only in 15 B. velezensis strains, which might lead to the synthesis of novel bioactive compounds and could be explored as antimicrobial agents in the future. These clusters endow B. velezensis CC09 with strong and broad antimicrobial activities, for example, in control of wheat powdery mildew disease. Moreover, our data further confirmed the taxonomy of strain CC09 is a member of B. velezensis rather than a strain of B. amyloliquefaciens based on core genome sequence analysis using phylogenomic approach.
Based on the principle of ultra-short channel MOSFET, a definite solution of potential is proposed by introducing two rectangular sources between the insulated gate and the space-charge region. By using the semi-analytical method and the spectral method, the 2D semi-analytical solution has been obtained for the first time as faras we know. The solution is a special function for the infinite series expressions. The most advantage of this model is that it can not only be calculated directly without numerical analysis but also keep the same accuracy as that of numerical solution. In addition, this model, which can be directly used in circuit simulation, has the characteristics that in its expression there is no adapter parameter with small calculating amount. The potential, surface potential and threshold of 45—22 nm MOSFET have been calculated in the frame of this model. It is shown that the calculated results are identical with Medici.
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