Films of Sn-doped ZrO2 were prepared using the sol–gel based dip-coating technique. The X-ray diffraction patterns showed a tetragonal structure with a preferential orientation along the (111) plane. The average grain size of the samples varies from 9.53 to 12.64 nm. Thermal analysis revealed endothermic peaks in the range 84–90 °C and exothermic peaks appearing in the range 489–531 °C. Fourier transform infrared (FTIR) spectra depicted bands located at 612 and 736 cm−1, which are attributed to stretching mode and asymmetric vibrations of Zr–O and O–Zr–O bonds respectively. All films exhibited high transmittance in the visible range above 60% and the optical band gap (Eg) decreases from 4.085 to 4.061 eV. The impedance measurements show that the equivalent circuit of the samples is an RpCp where Cp is the capacitance of the layer and Rp its resistance. The electrical conductivity was found to follows an Arrhenius law with two activation energies.