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A novel methodology ofphysical and electrical design rule based statistical process monitoring and modeling (PEDR-SPMM) was proposed. By the aid of principal component analysis, the correlated physical and electrical parameters are decomposed into an independent variable set. The key parameters of multiple products mixedrun could be formulated by the independent variable set, which reduce the modeling complexip, and also provide a way to get a comparison between different technology nodes. Index Terms-Design rule, principal component analysis, inline metrology, physical specifications, electrical specifications.

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The dislocation at the trench corner under Poly mask edges was found to be the major killer ofjunction leakage in generic logic technology. The impact of the sacrificial oxide (SAC-OX) of the well ion implantation (I/I) module and the source/drain (S/D) I/I to the defect formation are investigated for the first time. The influence on NVP-Welljunction leakage caused by the I/I sacrificial oxide from the Rapid Thermal Oxidation (RTO) and Furnace Oxidation (FO) are evaluated by using the process monitoring test structures. Based on the analysis of test structures and the yield evaluation of product, the optimized condition is proposed.

The yield loss of 0.25 um SRAM causing by the